In April 2026 onsemi announced an expanded strategic collaboration with NIO, with the third-generation EliteSiC M3e SiC MOSFET platform supporting next-generation 900V EV platforms.
On April 27, 2026, onsemi announced an expanded strategic collaboration with NIO around EliteSiC silicon carbide devices for the automaker next-generation 900V high-voltage EV platforms. EliteSiC M3e is the onsemi third-generation SiC MOSFET platform; a T2PAK top-cooled package version followed in late 2025 for easier thermal design in high-power use.
EliteSiC platform highlights
- M3e targets traction inverters, onboard chargers and DC-DC units, focused on cutting energy losses;
- The 1200V M3S series cuts power losses by up to 20% in hard-switching applications versus comparable parts, is automotive-qualified, and covers OBCs up to 22 kW plus HV-to-LV DC-DC;
- The T2PAK top-cool package combines an industry-standard footprint with a better thermal path.
What it signals
800V is already the mainstream choice for mid-to-high-end battery EVs in China; 900V platforms push SiC voltage classes, packaging and thermal design up another step. For drive and charging system makers, SiC capacity and lead times remain scarce in 2026: leading automakers sign long-term agreements directly with vendors, while smaller customers need to arrange spot and allocation channels early.
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