In June 2026 Nexperia extended its 650V GaN FET portfolio to 35/50/70 mΩ classes in TO-247-3, TO-247-4, TOLL and TOLT packages, targeting high-power industrial supplies.
On June 10, 2026, Nexperia expanded its 650V GaN FET portfolio with new 35 mΩ, 50 mΩ and 70 mΩ on-resistance classes in industry-standard TO-247-3, TO-247-4, TOLT and TOLL packages. The 35 mΩ and 70 mΩ versions began shipping immediately, and the 50 mΩ class was scheduled for the third quarter of 2026.
Technology approach and positioning
- A cascode structure pairs a high-voltage GaN HEMT with a low-voltage silicon MOSFET for a normally-off output; gate driving stays close to superjunction practice, easing replacement evaluations;
- The new large packages target server power supplies, PV inverters and EV-charging power modules, filling out a lineup that previously centered on SMD packages;
- A typical part is the GAN041-650WSB (650V, 35 mΩ, TO-247).
Why it belongs on the shortlist
GaN adoption at 650V is spreading from consumer fast chargers into industrial and data center power, and standard packages allow pin-compatible comparisons against superjunction MOSFETs. For buyers, confirm lead times and lot consistency early in the ramp; long lead times on superjunction MOSFETs also make GaN a realistic cost-down alternative to evaluate.
For price comparison, spot supply or alternate sourcing of Nexperia GaN FETs, submit an RFQ to Xinyuda Electronics.